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2SK1334
Silicon N-Channel MOS FET
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter
Outline
UPAK 21 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SK1334
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 200 20 1 2 1 1 150 -55 to +150
Unit V V A A A W C C
Notes: 1. PW 10 s, duty cycle 1% 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
2
2SK1334
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 200 20 -- -- 2.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.5 4.5 0.6 80 40 7 5 8 10 7 1.0 75 Max -- -- 10 50 4.0 3.8 7.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0 I F = 1 A, VGS = 0, diF/dt = 50 A/s I D = 0.5 A, VGS = 10 V, RL = 60 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 160 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.5 A, VGS = 10 V *1 I D = 2 A, VGS = 10 V *1 I D = 0.5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
Notes: 1. Pulse test 2. Marking for 2SK1334 is "BY".
3
2SK1334
Power vs. Temperature Derating 1.2 Channel Dissipation Pch (W) Test Condition: When using alumina ceramic board(12.5x20x0.7mm) 0.8 Maximum Safe Operation Area 5 2 Drain Current ID (A) 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 50 100 Ambient Temperature Ta (C) 150 1 3 30 300 1,000 10 100 Drain to Source Voltage VDS (V)
a are is (on) h nt S 10 ni RD s tio d by 10 ra te ei 0 PW 1 s Op lim m is = s D 10 C O m pe s (1 ra tio Sh n ot (T ) C= 25 C ) Ta = 25C
0.4
Typical Output Characteristics 2.0 10 V 1.6 Drain Current ID (A) 8V 7V 6V Pulse Test 1.6 Drain Current ID (A) 2.0
Typical Transfer Characteristics
VDS = 10 V Pulse Test
1.2
1.2
0.8 5V 0.4 4V 0 4 12 16 8 Drain to Source Voltage VDS (V) 20 VGS = 3 V
0.8
0.4
75C TC = 25C -25C 2 6 8 4 Gate to Source Voltage VGS (V) 10
0
4
2SK1334
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Static Drain to Source on State Resistance RDS (on) () Pulse Test 50 Pulse Test 20 10 5 2 1 0.5 0.05 VGS = 10 V 15 V Static Drain to Source on State Resistance vs. Drain Current
16
12 ID = 2 A
8
4
1A 0.5 A 4 12 16 8 Drain to Source Voltage VGS (V) 20
0
0.1
0.5 2 1 0.2 Drain Current ID (A)
5
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 10 VGS = 10 V Pulse Test ID = 2 A 5
Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 2 1 0.5 -25C TC = 25C 75C
8
6
1A 0.5 A
4 2
0.2 0.1 0.05 0.1 0.5 2 1 0.2 Drain Current ID (A) 5
0 -40
40 0 80 120 Case Temperature TC (C)
160
5
2SK1334
Reverse Recovery Time vs. Reverse Drain Current 500 Reverse Recovery Time t rr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 200 100 50 Capacitance C (pF) 100 Ciss Coss 10 1,000 VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage
20 10
Crss 5 0.05 0.1 0.2 0.5 2 1 Reverse Drain Current IDR (A) 5 1 0 10 30 40 20 50 Drain to Source Voltage VDS (V)
Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 150 V 100 V 400 50 V 300 VGS VDS VDD = 150 V 100 V 50 V 2 6 8 4 Gate Charge Qg (nc) 10 ID = 1 A 20 Gate to Source Voltage VGS (V) 16 100 50 Switching Time t (ns) 20 10
Switching Characteristics VGS = 10 V, VDD = 30 V PW = 2 s, duty < 1% tf td (off) tr 5 2 1 0.05 td (on)
12 8
200
100
4
0 0
0.1
0.5 1 2 0.2 Drain Current ID (A)
5
6
2SK1334
Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Dratin Current IDR (A) Pulse Test 1.6
1.2
0.8
0.4
10 V, 15 V VGS = 0, -5 V
0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
7
Unit: mm
4.5 0.1
0.4
1.8 Max 1
1.5 0.1 0.44 Max (2.5)
(1.5)
1.5 1.5 3.0
0.8 Min
0.44 Max
Hitachi Code JEDEC EIAJ Weight (reference value)
(0.4)
0.53 Max 0.48 Max
2.5 0.1 4.25 Max
UPAK -- Conforms 0.050 g
(0.2)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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